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| SMD Type MOS Field Effect Transistor 2SJ492 TO-263 +0.1 1.27-0.1 MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Low on-state resistance RDS(on)1 = 100 m RDS(on)2 = 185 m (MAX.) (VGS = -10 V, ID = -10 A) +0.2 8.7-0.2 (MAX.) (VGS =-4 V, ID =-10 A) Low Ciss: Ciss = 1210 pF (TYP.) Built-in gate protection diode +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage (AC) Gate to source voltage (DC) *1 Drain current (DC) Drain current(pulse) *2 Power dissipation TA=25 TC=25 Channel temperature Storage temperature Channel to Case Channel to Ambient *1 f = 20 kHz, Duty Cycle * 2 PW 10 s; d 1%. 10% (+Side) Symbol VDSS VGSS VGSS ID ID PD PD Tch Tstg Rth(ch-C) Rth(ch-A) Rating -60 20 -20 20 80 1.5 70 150 -55 to +150 1.79 83.3 /W /W Unit V V V A A W W 5.60 1 Gate 2 Drain 3 Source www.kexin.com.cn 1 SMD Type 2SJ492 Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Gate to source breakdown voltage Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS VGSS IDSS IGSS Testconditons ID=-10mA,VGS=0 IG= 200 A ,VDS=0 Min -20 10 MOSFET Typ Max Unit V V VDS=-60V,VGS=0 VGS= 20V,VDS=0 -1.0 5.0 -1.5 12 70 120 1210 VDS=-10V,VGS=0,f=1MHZ 520 180 16 VDD=-30V,VGS(on)=-10V,ID=--10A ,RG=10 140 90 80 -10 10 -2.0 A A V S VGS(off) VDS=-10V,ID=-1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=-10V,ID=-10A VGS=-10V,ID=-10A VGS=-4.0V,ID=-10A 100 185 m m pF pF pF ns ns ns ns 2 www.kexin.com.cn |
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